Transistor

The Power Mosfet IRF8513 SO-8 is an N-type conduction field effect transistor. This MOSFET is suitable for medium current applications, such as switching resistive loads. Its main specifications are: Saturation voltage (Vth): 2.35V Saturation resistance (Rds(on): 0.0155 ohm Collector current (Id): 8 A Collector-emitter voltage (Vce): 30 V Maximum operating temperature (Tj): 175°C For more information, please consult the component datasheet on the manufacturer's official website.

The Power Mosfet IRF9910 SO-8 It is an N-type conduction field effect transistor. This MOSFET is suitable for high current and high power applications, such as switching inductive loads. Its main specifications are: Saturation voltage (Vth): 2.55V Saturation resistance (Rds(on): 0.0134 ohms Collector current (Id): 10 A Collector-emitter voltage (Vce): 20 V Maximum operating temperature (Tj): 150°C For more information, please consult the component datasheet on the manufacturer's official website.