Transistors - GRMtronics

The BUK9E06 TO-262 It is an N-type conduction field-effect MOSFET. Its main specifications are: Saturation voltage (Vth): 2 V Saturation resistance (Rds(on): 0.06 ohms Collector current (Id): 75 A Collector-emitter voltage (Vce): 55 V Maximum operating temperature (Tj): 175 °C This MOSFET is suitable for high current applications, such as switching inductive loads. For more information, please consult the component datasheet on the manufacturer's official website.

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Mosfet IRF2804L TO-262

Mosfets

6,90 €

The IRF2804L TO-262 It is an N-type conduction field-effect MOSFET. Its main specifications are: Saturation voltage (Vth): 2.5 - 3V Saturation resistance (Rds(on): 0.1 ohm Collector current (Id): 82 A Collector-emitter voltage (Vce): 75 V Maximum operating temperature (Tj): 175 °C This MOSFET is suitable for high current applications, such as switching inductive loads. For more information, please consult the component datasheet on the manufacturer's official website.

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Power mosfet 2SK3069 TO-220

Mosfets

8,90 €

Il Power Mosfet 2SK3069 TO-220 è un transistor a effetto di campo a semiconduttore di tipo N in grado di

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Power Mosfet FDS8858CZ SO-8

Mosfets

2,60 €

The Power FDS8858CZ SO-8 MOSFET It is a dual MOSFET, that is, it has two channels, one N and one P. This makes it suitable for applications that require switching two independent loads. For example, it can be used to control two motors or two LEDs. Its main specifications are: Saturation voltage (Vth): 1.5V Saturation resistance (Rds(on): 0.02 ohms Collector current (Id): 10 A Collector-emitter voltage (Vce): 30 V Maximum operating temperature (Tj): 150°C For more information, please consult the component datasheet on the manufacturer's official website.

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Power Mosfet IR2301SPBF SO-8

Mosfets

The IR2301SPBF SO-8 It is a conduction N-type field effect MOSFET with an integrated driver. The integrated driver allows the MOSFET to be controlled by a low voltage logic signal. This makes it particularly suitable for applications where a MOSFET needs to be controlled by a microcontroller or other logic device. Its main specifications are: Saturation voltage (Vth): 4.5V Saturation resistance (Rds(on): 0.008 ohms Collector current (Id): 100 A Vds: 60 V Maximum operating temperature (Tj): 150°C For more information, please consult the component datasheet on the manufacturer's official website.

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