Showing 1–12 of 33 results

Fiat Scudo MOSFET Power Module

55,00 
Modulo di potenza MOSFET per pompa sterzo elettrica installata sulle seguenti vetture: – Citroen C8, Dispatch, Jumpy; – Fiat Scudo,

Mosfet BUK9540-100A TO-252

1,90 
The BUK9540-100A TO-252 is a high-performance power MOSFET, suitable for applications where high current and high efficiency are required. The specifications of the BUK9540-100A TO-252 are as follows: Type: N-Channel MOSFET Saturation voltage: 40V Saturation current: 100A Drain-source resistance: 0.006 ohms Input capacity: 1.6 pF Output capacity: 30 pF Operating temperature: -55°C ~ +150°C Package: TO-252 In addition, the BUK9540-100A TO-252 has the following features: Switching gate-source voltage: 10V Climbing time: 25 ns Descent time: 25 ns Gate resistance: 10 ohms Gate capacity: 200 pF  

Mosfet BUK9E06 TO-262

5,60 
The BUK9E06 TO-262 It is an N-type conduction field-effect MOSFET. Its main specifications are: Saturation voltage (Vth): 2 V Saturation resistance (Rds(on): 0.06 ohms Collector current (Id): 75 A Collector-emitter voltage (Vce): 55 V Maximum operating temperature (Tj): 175 °C This MOSFET is suitable for high current applications, such as switching inductive loads. For more information, please consult the component datasheet on the manufacturer's official website.

IR2171S 8SOIC Mosfet

Function: Current Sense Voltage: Input 9.5V ~ 20V Current: Output 1mA Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Supplier Device Package: 8-SOIC N

Mosfet IRF2804L TO-262

6,90 
The IRF2804L TO-262 It is an N-type conduction field-effect MOSFET. Its main specifications are: Saturation voltage (Vth): 2.5 - 3V Saturation resistance (Rds(on): 0.1 ohm Collector current (Id): 82 A Collector-emitter voltage (Vce): 75 V Maximum operating temperature (Tj): 175 °C This MOSFET is suitable for high current applications, such as switching inductive loads. For more information, please consult the component datasheet on the manufacturer's official website.

Mosfet IRF3710STRL TO-252

4,30 
The IRF3710STRL TO-252 It is a high-performance power MOSFET, suitable for applications where high current and high efficiency are required. The specifications of IRF3710STRL TO-252 are as follows: Type: N-Channel MOSFET Threshold voltage: 2.5V Continuous drain current: 100A

Power mosfet 2SK3069 TO-220

8,90 
Il Power Mosfet 2SK3069 TO-220 è un transistor a effetto di campo a semiconduttore di tipo N in grado di

Power Mosfet FDS8858CZ SO-8

2,60 
The Power FDS8858CZ SO-8 MOSFET It is a dual MOSFET, that is, it has two channels, one N and one P. This makes it suitable for applications that require switching two independent loads. For example, it can be used to control two motors or two LEDs. Its main specifications are: Saturation voltage (Vth): 1.5V Saturation resistance (Rds(on): 0.02 ohms Collector current (Id): 10 A Collector-emitter voltage (Vce): 30 V Maximum operating temperature (Tj): 150°C For more information, please consult the component datasheet on the manufacturer's official website.

Power Mosfet IR2301SPBF SO-8

The IR2301SPBF SO-8 It is a conduction N-type field effect MOSFET with an integrated driver. The integrated driver allows the MOSFET to be controlled by a low voltage logic signal. This makes it particularly suitable for applications where a MOSFET needs to be controlled by a microcontroller or other logic device. Its main specifications are: Saturation voltage (Vth): 4.5V Saturation resistance (Rds(on): 0.008 ohms Collector current (Id): 100 A Vds: 60 V Maximum operating temperature (Tj): 150°C For more information, please consult the component datasheet on the manufacturer's official website.

Power mosfet IRF1324PBF TO-220

5,80 
Il Power Mosfet IRF1324PBF TO-220 è un transistor a effetto di campo a semiconduttore di tipo N in grado di

Power mosfet IRF3205 TO-220

2,95 
The Power Mosfet IRF530N TO-220 is an N-type semiconductor field-effect transistor capable of

Power mosfet IRF3710Z TO-220

3,15 
The Power Mosfet IRF530N TO-220 is an N-type semiconductor field-effect transistor capable of