Showing 133–144 of 268 results

Power MOSFET IRF9530 TO-220

2,80 
The IRF9530 TO-220 Power Mosfet is an N-type semiconductor field-effect transistor capable of handling

Power Mosfet IRF9910 SO-8

The Power Mosfet IRF9910 SO-8 It is an N-type conduction field effect transistor. This MOSFET is suitable for high current and high power applications, such as switching inductive loads. Its main specifications are: Saturation voltage (Vth): 2.55V Saturation resistance (Rds(on): 0.0134 ohms Collector current (Id): 10 A Collector-emitter voltage (Vce): 20 V Maximum operating temperature (Tj): 150°C For more information, please consult the component datasheet on the manufacturer's official website.

Power Mosfet IRF9Z34N TO-220

4,80 
Il Power Mosfet IRF9Z34N  TO-220 è un transistor a effetto di campo a semiconduttore di tipo N in grado di

Power Mosfet IRL2203N TO-220

4,30 
The Power Mosfet IRL2203N TO-220 is an N-type semiconductor field-effect transistor, designed for applications

Power Mosfet IRL2505PBF TO-220

4,30 
The IRL2505PBF TO-220 Power Mosfet is an N-type semiconductor field-effect transistor, designed for applications

Power Mosfet N-Channel IRL2203NS TO-263

6,70 
The IRL2203NS TO-263 It is an N-type conduction field-effect MOSFET. Its main specifications are: Saturation voltage (Vth): 2.5V Saturation resistance (Rds(on): 0.02 ohms Collector current (Id): 116 A Collector-emitter voltage (Vce): 30 V Maximum operating temperature (Tj): 175 °C This MOSFET is suitable for high current applications, such as switching inductive loads. For more information, please consult the component datasheet on the manufacturer's official website.

Power Mosfet P60ZB TO-220

3,90 
The Power Mosfet P60ZB TO-220 is an N-type semiconductor field-effect transistor capable of

Power Mosfet RFP70N06 TO-220

4,30 
Il Power Mosfet RFP70N06 TO-220 È un transistor a effetto di campo a conduzione laterale (LDMOS) con un’area di gate

Power Mosfet STP75NS04Z TO-220

7,80 
Il Power Mosfet STP75NS04Z TO-220 è un transistor a effetto di campo a semiconduttore di tipo N in grado di

Power Mosfet STP80N6F6 TO-220

4,90 
Il Power Mosfet RFP70N06 TO-220 È un transistor a effetto di campo a semiconduttore di tipo N in grado di

Power Mosfet STS4NF100 SO-8

The Power Mosfet STS4NF100 SO-8 is a N-type conduction field effect transistor and has a lower collector current of 100A, this makes it more suitable for medium current applications. Its main specifications are: Saturation voltage (Vth): 2.5V Saturation resistance (Rds(on): 0.02 ohms Collector current (Id): 100 A Collector-emitter voltage (Vce): 30 V Maximum operating temperature (Tj): 150°C For more information, please consult the component datasheet on the manufacturer's official website.

Power Mosfet TPC8125 SOIC-8

The Power Mosfet TPC8125 SOIC-8 is a P-type conduction field effect transistor (requires a negative voltage to be activated). This MOSFET is suitable for low voltage applications, such as signal amplification and switching. Its main specifications are: Saturation voltage (Vth): -2.5V Saturation resistance (Rds(on): 0.02 ohms Collector current (Id): 10 A Collector-emitter voltage (Vce): 30 V Maximum operating temperature (Tj): 150°C For more information, please consult the component datasheet on the manufacturer's official website.